- Part: R6030ENZ
- Description: Power MOSFET
- Category: MOSFET
- Manufacturer: ROHM
- Size: 2.41 MB
Key Features
- 1) Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS pliant lPackaging specifications Packing Tube Reel size (mm)
- lApplication Switching Tape width (mm)
- Type Quantity (pcs) 300 Taping code C17 Marking lAbsolute Parameter Symbol Value R6030ENZ Unit Drain
- Source voltage Continuous drain current Pulsed drain current Gate
- 55~+150 ℃ .rohm. © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20191226 - Rev.002 R6030ENZ lAbsolute Reverse diode dv/dt Drain
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
R6030ENZ1
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6030ENZ
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6030635
|
Powerex, Inc |
Fast Recovery Rectifier |
|
R6030822
|
Powerex, Inc |
Fast Recovery Rectifier |
|
R6030825
|
Powerex, Inc |
Fast Recovery Rectifier |
|
R6030KNX
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6030KNZ
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6030KNZ1
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6030MNX
|
Inchange Semiconductor |
N-Channel MOSFET |
|
R6031022
|
Powerex, Inc |
Fast Recovery Rectifier |