R6030ENZ1 Description
lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple.
R6030ENZ1 Key Features
- 1 BODY DIODE
- le lApplication
R6030ENZ1 Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
R6030ENZ1 | N-Channel MOSFET |
lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple.