Part R6030ENZ
Description Power MOSFET
Category MOSFET
Manufacturer ROHM
Size 2.41 MB
ROHM
R6030ENZ

Overview

  • 2 A Avalanche energy, single pulse EAS*3 636 mJ Avalanche energy, repetitive EAR*3
  • 96 mJ Power dissipation (TC = 25°C) PD*4 120 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55~+150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/12