* Inner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate ∗1 (2) Drain (3) Source 4) Drive circuits can be simple. 5) Parallel use is easy. 1 BODY DIODE (1) (2) (3) 6) Pb-free lead plating ; RoHS compliant
* Packaging s
R6046FNZ1 Datasheet (838.69 KB)
R6046FNZ1
838.69 KB
Mosfet.
NotNeRewcDoemsimgennsded for
R6046FNZ1
Nch 600V 46A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
600V 0.098
46A 694W
*Outline
TO-247
(1.
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