R6076ENZ1 Datasheet, Mosfet, ROHM

R6076ENZ1 Features

• Mosfet 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source

PDF File Details

Part number:

R6076ENZ1

Manufacturer:

ROHM ↗

File Size:

949.24kb

Download:

📄 Datasheet

Description:

Nch 600v 76a power mosfet.

TAGS

R6076ENZ1

ROHM

📁 Related Datasheet

R6076ENZ1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6076ENZ1 FEATURES ·Drain Current –ID= 76A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-.

R6076KNZ4 - Power MOSFET (ROHM)
R6076KNZ4 　　Nch 600V 76A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 42mΩ ±76A 735W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use.

R6076MNZ1 - MOSFET (ROHM)
R6076MNZ1 　　Nch 600V 76A Power MOSFET 　　 Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline 　 RDS(on)(Max.) 0.055Ω ID ±76A TO-247 P.

R600 - General Purpose Rectifier (Powerex Power Semiconductors)
.

R6000 - High Voltage Rectifiers (LGE)
R2500-R6000 High Voltage Rectifiers Features — Low cost — Low leakage — Low forward voltage drop — High current capability — Easily cleaned with alco.

R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
MCC Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST R3500F THRU R6000F 0.2mA Fast Reco.

R6000GP - High Voltage Silicon Rectifier (MCC)
MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % # .

R6002END3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6002END3 FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.

R6002END3 - Power MOSFET (ROHM)
R6002END3 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuit.

R6002ENH - Power MOSFET (ROHM)
R6002ENH 　　Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 2W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is.