Datasheet Details
- Part number
- R6004ENJ
- Manufacturer
- INCHANGE
- File Size
- 250.39 KB
- Datasheet
- R6004ENJ-INCHANGE.pdf
- Description
- N-Channel MOSFET
R6004ENJ Description
isc N-Channel MOSFET Transistor R6004ENJ .
Designed for use in switch mode power supplies and general
purpose applications.
R6004ENJ Features
* Drain Current
* ID= 4A@ TC=25℃
* Drain Source Voltage-
: VDSS=600V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 980mΩ(Max)
* 100% avalanche tested
R6004ENJ Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
4
A
IDM
Drain Current-Single Pluse
8
A
PD
Total Dissipation @TC=25℃
58
W
TJ
Max. Operating Junction Temperature
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