R6004ENJ Datasheet - INCHANGE

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R6004ENJ N-Channel MOSFET

isc N-Channel MOSFET Transistor R6004ENJ .
Designed for use in switch mode power supplies and general purpose applications.

R6004ENJ-INCHANGE.pdf

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Datasheet Details

Part number:

R6004ENJ

Manufacturer:

INCHANGE

File Size:

250.39 KB

Description:

N-Channel MOSFET

Features

* Drain Current
* ID= 4A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 980mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 58 W TJ Max. Operating Junction Temperature

R6004ENJ Distributors

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R6004ENJ N-Channel MOSFET INCHANGE

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