R6003KND3 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor R6003KND3 .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: R6003KND3
Manufacturer: INCHANGE
File Size: 261.22 KB
Datasheet: R6003KND3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID=3A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Pluse 9 A PD Total Dissipation @TC=25℃ 44 W TJ Max. Operating Junction Temperature

R6003KND3 Distributors

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R6003KND3 N-Channel MOSFET INCHANGE

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