R6003KND3 Datasheet, Mosfet, INCHANGE

R6003KND3 Features

  • Mosfet
  • Drain Current
      –ID=3A@ TC=25℃
  • Drain Source Voltage- : VDSS=600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max)
  • 100% aval

PDF File Details

Part number:

R6003KND3

Manufacturer:

INCHANGE

File Size:

261.22kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

  • Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

  • Datasheet Preview: R6003KND3 📥 Download PDF (261.22kb)
    Page 2 of R6003KND3

    R6003KND3 Application

    • Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continu

    TAGS

    R6003KND3
    N-Channel
    MOSFET
    INCHANGE

    📁 Related Datasheet

    R6003KND3 - Power MOSFET (ROHM)
    .

    R600 - General Purpose Rectifier (Powerex Power Semiconductors)
    .

    R6000 - High Voltage Rectifiers (LGE)
    R2500-R6000 High Voltage Rectifiers Features — Low cost — Low leakage — Low forward voltage drop — High current capability — Easily cleaned with alco.

    R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
    MCC Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST R3500F THRU R6000F 0.2mA Fast Reco.

    R6000GP - High Voltage Silicon Rectifier (MCC)
    MCC R Micro Commercial Components      omponents 20736 Marilla Street Chatsworth  # $ % # .

    R6002END3 - N-Channel MOSFET (INCHANGE)
    isc N-Channel MOSFET Transistor R6002END3 FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.

    R6002END3 - Power MOSFET (ROHM)
    R6002END3   Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuit.

    R6002ENH - Power MOSFET (ROHM)
    R6002ENH   Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 2W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is.

    R6004CND - N-Channel MOSFET (ROHM)
    Data Sheet 10V Drive Nch MOSFET R6004CND  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4.

    R6004END - Power MOSFET (Rohm)
    R6004END   Nch 600V 4A Power MOSFET    Datasheet VDSS 600V lOutline TO-252   RDS(on)(Max.) 0.98Ω SC-63 ID ±4.0A CPT3 PD lFeatures 58W   .

    Stock and price

    ROHM Semiconductor
    MOSFET N-CH 600V 3A TO252
    DigiKey
    R6003KND3TL1
    96 In Stock
    Qty : 1000 units
    Unit Price : $0.78
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts