R6004KNJ - N-Channel MOSFET

INCHANGE

R6004KNJ Datasheet Preview — Preview of R6004KNJ PDF

Datasheet Details

Part number	R6004KNJ
Manufacturer	INCHANGE
File Size	250.99 KB
Description	N-Channel MOSFET
Datasheet	R6004KNJ-INCHANGE.pdf

R6004KNJ Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 58 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resis

Features

Drain Current.
ID= 4A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 980mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6004KNJ Similar Datasheet

R6004KND - Power MOSFET (ROHM)
R6004KNX - Power MOSFET (Rohm)
R6004CND - N-Channel MOSFET (ROHM)
R6004END - Power MOSFET (Rohm)
R6004ENX - Power MOSFET (Rohm)
R6004JNX - Power MOSFET (ROHM)
R600 - General Purpose Rectifier (Powerex Power Semiconductors)
R6000 - High Voltage Rectifiers (LGE)

Other Datasheets by INCHANGE

R6004ENJ - N-Channel MOSFET
R6004JND3 - N-Channel MOSFET
R6004JNJ - N-Channel MOSFET
R6002END3 - N-Channel MOSFET
R6003KND3 - N-Channel MOSFET
R6006JND3 - N-Channel MOSFET

Published: Mar 1, 2021 |