R6004JNJ
INCHANGE
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N-channel mosfet.
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R6004JND3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6004JND3
FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6004JND3 - Power MOSFET
(ROHM)
R6004JND3
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 1.43Ω ±4A 60W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance.
R6004JNJ - Power MOSFET
(ROHM)
R6004JNJ
Nch 600V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 1.43Ω ±4A 60W
lFeatures
1) Fast reverse recovery time (trr) 2) Low on-resistance .
R6004JNX - Power MOSFET
(ROHM)
R6004JNX
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-220FM
RDS(on)(Max.)
1.43Ω
ID
±4A
PD
35W
lFea.
R6004JNX - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6004JNX
FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resi.
R6004CND - N-Channel MOSFET
(ROHM)
Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4.
R6004END - Power MOSFET
(Rohm)
R6004END
Nch 600V 4A Power MOSFET
Datasheet
VDSS
600V
lOutline
TO-252
RDS(on)(Max.)
0.98Ω
SC-63
ID
±4.0A
CPT3
PD
lFeatures
58W
.
R6004ENJ - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6004ENJ
FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Res.
R6004ENJ - Power MOSFET
(ROHM)
R6004ENJ
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
TO-263S
RDS(on)(Max.)
0.98Ω
SC-83
ID
±4.0A
LPT(S)
PD
lFeatures
58W.
R6004ENX - Power MOSFET
(Rohm)
R6004ENX
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.98Ω
ID
±4.0A
TO-220FM
PD
40W
lFeatures
1.