R6004KNJ Datasheet, Mosfet, Rohm

R6004KNJ Features

• Mosfet 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lOutline TO-263S SC-83 LPT(S) 　 　　　　　　 lInner circuit 　　 Datashe

PDF File Details

Part number:

R6004KNJ

Manufacturer:

ROHM ↗

File Size:

1.40MB

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

R6004KNJ

Rohm

📁 Related Datasheet

R6004KND - Power MOSFET (ROHM)
R6004KND 　　Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3).

R6004KNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6004KNJ FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6004KNX - Power MOSFET (Rohm)
R6004KNX 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1.

R6004KNX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6004KNX FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6004CND - N-Channel MOSFET (ROHM)
Data Sheet 10V Drive Nch MOSFET R6004CND  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4.

R6004END - Power MOSFET (Rohm)
R6004END 　　Nch 600V 4A Power MOSFET 　　 Datasheet VDSS 600V lOutline TO-252 　 RDS(on)(Max.) 0.98Ω SC-63 ID ±4.0A CPT3 PD lFeatures 58W 　 .

R6004ENJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6004ENJ FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6004ENJ - Power MOSFET (ROHM)
R6004ENJ 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V TO-263S 　 RDS(on)(Max.) 0.98Ω SC-83 ID ±4.0A LPT(S) PD lFeatures 58W.

R6004ENX - Power MOSFET (Rohm)
R6004ENX 　　Nch 600V 4A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W 　 　　　　　　 lFeatures 1.

R6004ENX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6004ENX FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.