R6006AND Datasheet, Mosfet, Rohm

R6006AND Features

  • Mosfet 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. 5)

PDF File Details

Part number:

R6006AND

Manufacturer:

ROHM ↗

File Size:

657.16kb

Download:

📄 Datasheet

Description:

Nch 600v 6a power mosfet.

Datasheet Preview: R6006AND 📥 Download PDF (657.16kb)
Page 2 of R6006AND Page 3 of R6006AND

TAGS

R6006AND
Nch
600V
Power
MOSFET
Rohm

📁 Related Datasheet

R6006ANX - Nch 600V 6A Power MOSFET (Rohm)
R6006ANX Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 1.2W 6A 40W lOutline TO-220FM (1)(2)(3) lFeatures 1) Low on-resistanc.

R6006JND3 - Power MOSFET (ROHM)
R6006JND3   Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistanc.

R6006JND3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6006JND3 FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6006JNJ - Power MOSFET (ROHM)
R6006JNJ   Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.936Ω ±6A 86W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance.

R6006JNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6006JNJ FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.

R6006JNX - Power MOSFET (ROHM)
R6006JNX   Nch 600V 6A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.936Ω   ID ±6A   PD 43W            lFe.

R6006JNX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6006JNX FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.

R6006KND3 - Power MOSFET (ROHM)
R6006KND3   Nch 600V 6A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 830mΩ ±6A 70W lFeatures 1) Low on-resistance 2) Ultra fast switching speed 3) Pa.

R6006KND3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6006KND3 FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res.

R6006KNX - Power MOSFET (ROHM)
R6006KNX   Nch 600V 6A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.83Ω ID ±6A TO-220FM PD 40W          lFeatures 1) .

Stock and price

ROHM Semiconductor
MOSFET N-CH 600V 6A CPT
DigiKey
R6006ANDTL
2350 In Stock
Qty : 1000 units
Unit Price : $0.99
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts