Nch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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LTK5302 _G11W   LTK5302 BOOST ， 2Ω 11W 。 LTK5302 ， ， EN ， D 、D 、AB 、， IO ， 。   6.5V 7.1V  IO  FM  、 

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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A1 A1semi Electronics Ltd AS54303A 400KHz Synchronous Rectified Step-Down Converter „ GENERAL DESCRIPTION The AS5430 is a monolithic synchronous bu

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A1 DC- DC 2A, 18V High Efficiency Electronics Ltd Synchronous Step-Down Converter A1semi AS5422A General Description The AS5422A is a wide input ra

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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V-Data Synchronous DRAM VDS7608A4A 4M x 8 Bit x 4 Banks General Description The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 wo

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A1 PROs 1. Overview Ver0.1 Ai339 1/3 inch CCD Image Sensor for PAL Camera 1.1 General Description The Ai339 is a 440K pixels CCD area sensor for PAL

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A-Data Synchronous DRAM ADS6608A4A 2M x 8 Bit x 4 Banks General Description The ADS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 wo

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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V-Data Synchronous DRAM VDS6632A4A 512K x 32 Bit x 4 Banks General Description The VDS6632A4A are four-bank Synchronous DRAMs organized as 524,288 w

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