Nch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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LTK5302 _G11W   LTK5302 BOOST ， 2Ω 11W 。 LTK5302 ， ， EN ， D 、D 、AB 、， IO ， 。   6.5V 7.1V  IO  FM  、 

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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® RT8249A/B/C Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs General Description The RT8249A/B/C is a dual-channel step-down,

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N-Channel Trench Power MOSFET General Description The D444 combines advanced trench MOSFET technology with a low resistance package to provide extreme

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Chipnet CN3903 36V/3.5A500KHzSynchronousStep-DownConverter Features • Wide 4.5V to 36V Operating Input Range • 3.5A Continuous Output Current • 50

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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A1 A1semi Electronics Ltd AS54303A 400KHz Synchronous Rectified Step-Down Converter „ GENERAL DESCRIPTION The AS5430 is a monolithic synchronous bu

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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MKP-g page 27-34/ 17.03.05 Page 27 Metallized Polycarbonate Capacitors Applications DC and AC voltages Professional Applications Tuned circuits, filt

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A1 DC- DC 2A, 18V High Efficiency Electronics Ltd Synchronous Step-Down Converter A1semi AS5422A General Description The AS5422A is a wide input ra

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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TPQ05100x 0.9-V to 5.5-V VIN, 600-mA Synchronous Step-up Regulator Features • 260-nA Ultra-Low IQ into the VOUT Pin • 40-nA Ultra-Low IQ into the VIN

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