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3DD13009 NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage : VCE(sat) = 1. Sw.

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Datasheet Specifications

Part number
3DD13009
Manufacturer
INCHANGE
File Size
212.12 KB
Datasheet
3DD13009-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switch mode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

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