RD3T050CN
1.44MB
Power mosfet.
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RD3T050CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3T050CN
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-R.
RD3T075CN - Power MOSFET
(ROHM)
RD3T075CN
Nch 200V 7.5A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
200V 325mΩ ±7.5A
52W
lFeatures 1) Low on-resistance 2) Fast switching spee.
RD3T075CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3T075CN
FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On.
RD3T100CN - Power MOSFET
(ROHM)
.
RD3T100CN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3T100CN
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-.
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
RD3.0E - SILICON ZENER DIODES
(EIC)
RD2.0E ~ RD39E
VZ : 2.0 - 39 Volts PD : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.
RD3.0E - Zener Diode
(NEC)
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in.
RD3.0E - 500mW PLANAR TYPE SILICON ZENER DIODES
(Renesas)
DATA SHEET
ZENER DIODES
RD2.0E to RD120E
500 mW PLANAR TYPE SILICON ZENER DIODES
DESCRIPTION
These products are zener diodes with an allowable dissip.
RD3.0EB - ZENER DIODES
(SEMTECH)
RD2.0E~RD200E
ZENER DIODES
Features • DHD (Double Heatsink Diode) Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 G.