Part number:
RD3G500GN
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File Size:
1.49MB
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Description:
Power mosfet.
PDF File Details
RD3G500GN
1.49MB
Power mosfet.
📁 Related Datasheet
RD3G500GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G500GN
FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3G01BAT - Power MOSFET
(ROHM)
RD3G01BAT
Pch -40V -15A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-40V 39mΩ ±15A 25W
lFeatures
1) Low on - resistance 2) Fast switching spee.
RD3G03BAT - Power MOSFET
(ROHM)
RD3G03BAT
Pch -40V -35A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-40V 19.1mΩ
±35A 56W
lFeatures
1) Low on - resistance 2) Fast switching sp.
RD3G400GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G400GN
FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3G400GN - Power MOSFET
(ROHM)
RD3G400GN
Nch 40V 40A Power MOSFET
Datasheet
lOutline
VDSS
40V
RDS(on)(Max.)
7.5mΩ
DPAK
ID
±40A
TO-252
PD
26W
lFeature.
RD3G600GN - Power MOSFET
(ROHM)
RD3G600GN
Nch 40V 60A Power MOSFET
Datasheet
lOutline
VDSS
40V
RDS(on)(Max.)
3.6mΩ
DPAK
ID
±60A
TO-252
PD
40W
lFeature.
RD3G600GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G600GN
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
RD3.0E - SILICON ZENER DIODES
(EIC)
RD2.0E ~ RD39E
VZ : 2.0 - 39 Volts PD : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.
RD3.0E - Zener Diode
(NEC)
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in.
