Part number:
RD3G600GN
Manufacturer:
File Size:
2.64 MB
Description:
Power mosfet.
* 1) Low on - resistance 2) High power package (TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless
RD3G600GN
2.64 MB
Power mosfet.
📁 Related Datasheet
RD3G600GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G600GN
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3G01BAT - Power MOSFET
(ROHM)
RD3G01BAT
Pch -40V -15A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-40V 39mΩ ±15A 25W
lFeatures
1) Low on - resistance 2) Fast switching spee.
RD3G03BAT - Power MOSFET
(ROHM)
RD3G03BAT
Pch -40V -35A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-40V 19.1mΩ
±35A 56W
lFeatures
1) Low on - resistance 2) Fast switching sp.
RD3G400GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G400GN
FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3G400GN - Power MOSFET
(ROHM)
RD3G400GN
Nch 40V 40A Power MOSFET
Datasheet
lOutline
VDSS
40V
RDS(on)(Max.)
7.5mΩ
DPAK
ID
±40A
TO-252
PD
26W
lFeature.
RD3G500GN - Power MOSFET
(ROHM)
RD3G500GN
Nch 40V 50A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
40V 4.9mΩ ±50A 35W
lFeatures 1) Low on - resistance 2) High power package (TO-252) 3).
RD3G500GN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3G500GN
FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-R.
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
