RD3G400GN N-Channel MOSFET

INCHANGE

RD3G400GN Description

isc N-Channel MOSFET Transistor RD3G400GN .
Designed for use in switch mode power supplies and general purpose applications.

RD3G400GN Features

* Drain Current
* ID= 40A@ TC=25℃
* Drain Source Voltage- : VDSS= 40V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max)
* 100% avalanche tested

RD3G400GN Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 26 W TJ Max. Operating Junction Temperatur

📥 Download Datasheet

RD3G400GN Datasheet Preview — Preview of RD3G400GN PDF

Datasheet Details

Part number: RD3G400GN
Manufacturer: INCHANGE
File Size: 260.70 KB
Datasheet: RD3G400GN-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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