RD3G400GN Datasheet, Mosfet, INCHANGE

RD3G400GN Features

  • Mosfet
  • Drain Current
      –ID= 40A@ TC=25℃
  • Drain Source Voltage- : VDSS= 40V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max)
  • 100% a

PDF File Details

Part number:

RD3G400GN

Manufacturer:

INCHANGE

File Size:

260.70kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

  • Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

  • Datasheet Preview: RD3G400GN 📥 Download PDF (260.70kb)
    Page 2 of RD3G400GN

    RD3G400GN Application

    • Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuo

    TAGS

    RD3G400GN
    N-Channel
    MOSFET
    INCHANGE

    📁 Related Datasheet

    RD3G400GN - Power MOSFET (ROHM)
    RD3G400GN   Nch 40V 40A Power MOSFET    Datasheet lOutline VDSS 40V   RDS(on)(Max.) 7.5mΩ DPAK ID ±40A TO-252 PD 26W          lFeature.

    RD3G01BAT - Power MOSFET (ROHM)
    RD3G01BAT Pch -40V -15A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -40V 39mΩ ±15A 25W lFeatures 1) Low on - resistance 2) Fast switching spee.

    RD3G03BAT - Power MOSFET (ROHM)
    RD3G03BAT Pch -40V -35A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -40V 19.1mΩ ±35A 56W lFeatures 1) Low on - resistance 2) Fast switching sp.

    RD3G500GN - Power MOSFET (ROHM)
    RD3G500GN   Nch 40V 50A Power MOSFET VDSS RDS(on)(Max.) ID PD 40V 4.9mΩ ±50A 35W lFeatures 1) Low on - resistance 2) High power package (TO-252) 3).

    RD3G500GN - N-Channel MOSFET (INCHANGE)
    isc N-Channel MOSFET Transistor RD3G500GN FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R.

    RD3G600GN - Power MOSFET (ROHM)
    RD3G600GN   Nch 40V 60A Power MOSFET    Datasheet lOutline VDSS 40V   RDS(on)(Max.) 3.6mΩ DPAK ID ±60A TO-252 PD 40W          lFeature.

    RD3G600GN - N-Channel MOSFET (INCHANGE)
    isc N-Channel MOSFET Transistor RD3G600GN FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R.

    RD3.0E - Zener diode (Excel Semiconductor)
    RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant volta.

    RD3.0E - SILICON ZENER DIODES (EIC)
    RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.

    RD3.0E - Zener Diode (NEC)
    DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE (DO-35) DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in.

    Stock and price

    ROHM Semiconductor
    MOSFET N-CH 40V 40A TO252
    DigiKey
    RD3G400GNTL
    14731 In Stock
    Qty : 1000 units
    Unit Price : $0.53
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts