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RD3H080SP P-Channel MOSFET

RD3H080SP Description

isc P-Channel MOSFET Transistor RD3H080SP .
Designed for use in switch mode power supplies and general purpose applications.

RD3H080SP Features

* Drain Current
* ID= -8A@ TC=25℃
* Drain Source Voltage- : VDSS= -45V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 91mΩ(Max)
* 100% avalanche tested

RD3H080SP Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -8 A IDM Drain Current-Single Pluse -16 A PD Total Dissipation @TC=25℃ 15 W TJ Max. Operating Junction Temperat

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Datasheet Details

Part number
RD3H080SP
Manufacturer
INCHANGE
File Size
261.42 KB
Datasheet
RD3H080SP-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
INCHANGE RD3H080SP-like datasheet