RD3H080SP P-Channel MOSFET

INCHANGE

Description

isc P-Channel MOSFET Transistor RD3H080SP .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: RD3H080SP
Manufacturer: INCHANGE
File Size: 261.42 KB
Datasheet: RD3H080SP-INCHANGE.pdf
Description: P-Channel MOSFET

Features

* Drain Current
* ID= -8A@ TC=25℃
* Drain Source Voltage- : VDSS= -45V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 91mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -8 A IDM Drain Current-Single Pluse -16 A PD Total Dissipation @TC=25℃ 15 W TJ Max. Operating Junction Temperat

RD3H080SP Distributors

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RD3H080SP P-Channel MOSFET INCHANGE

INCHANGE RD3H080SP-like datasheet