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RD3H200SN N-Channel MOSFET

RD3H200SN Description

isc N-Channel MOSFET Transistor RD3H200SN .
Designed for use in switch mode power supplies and general purpose applications.

RD3H200SN Features

* Drain Current
* ID= 20A@ TC=25℃
* Drain Source Voltage- : VDSS= 45V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)
* 100% avalanche tested

RD3H200SN Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 20 W TJ Max. Operating Junction Temperatur

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Datasheet Details

Part number
RD3H200SN
Manufacturer
INCHANGE
File Size
260.34 KB
Datasheet
RD3H200SN-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE RD3H200SN-like datasheet