RD3H200SN - N-Channel MOSFET

INCHANGE

RD3H200SN Datasheet Preview — Preview of RD3H200SN PDF

Datasheet Details

Part number	RD3H200SN
Manufacturer	INCHANGE
File Size	260.34 KB
Description	N-Channel MOSFET
Datasheet	RD3H200SN-INCHANGE.pdf

RD3H200SN Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 20 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist

Features

Drain Current.
ID= 20A@ TC=25℃.
Drain Source Voltage- : VDSS= 45V(Min).
Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 15, 2021 |