RD3G600GN N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor RD3G600GN .
Designed for use in switch mode power supplies and general purpose applications.

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Datasheet Specifications

Part number: RD3G600GN
Manufacturer: INCHANGE
File Size: 260.50 KB
Datasheet: RD3G600GN-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 60A@ TC=25℃
* Drain Source Voltage- : VDSS= 40V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max)
* 100% avalanche tested

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperatu

RD3G600GN Distributors

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RD3G600GN N-Channel MOSFET INCHANGE

INCHANGE RD3G600GN-like datasheet