RD3G600GN - N-Channel MOSFET

INCHANGE

RD3G600GN Datasheet Preview — Preview of RD3G600GN PDF

Datasheet Details

Part number	RD3G600GN
Manufacturer	INCHANGE
File Size	260.50 KB
Description	N-Channel MOSFET
Datasheet	RD3G600GN-INCHANGE.pdf

RD3G600GN Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 120 A PD Total Dissipation @TC=25℃ 40 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resis

Features

Drain Current.
ID= 60A@ TC=25℃.
Drain Source Voltage- : VDSS= 40V(Min).
Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 15, 2021 |