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RD3G500GN

N-Channel MOSFET

RD3G500GN Features

* Drain Current

* ID= 50A@ TC=25℃

* Drain Source Voltage- : VDSS= 40V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 4.9mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

RD3G500GN General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse.

RD3G500GN Datasheet (260.30 KB)

Preview of RD3G500GN PDF

Datasheet Details

Part number:

RD3G500GN

Manufacturer:

INCHANGE

File Size:

260.30 KB

Description:

N-channel mosfet.

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RD3G500GN N-Channel MOSFET INCHANGE

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