RD3H160SP
1.51MB
Power mosfet.
TAGS
📁 Related Datasheet
RD3H160SP - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
RD3H160SP
FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -45V(Min) ·Static Drain-Source On.
RD3H045SP - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
RD3H045SP
FEATURES ·Drain Current –ID= -4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -45V(Min) ·Static Drain-Source O.
RD3H045SP - Power MOSFET
(ROHM)
RD3H045SP
Pch -45V -4.5A Power MOSFET
Datasheet
lOutline
VDSS
-45V
RDS(on)(Max.)
155mΩ
DPAK
ID
±4.5A
TO-252
PD
15W
lFe.
RD3H080SP - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
RD3H080SP
FEATURES ·Drain Current –ID= -8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -45V(Min) ·Static Drain-Source On-.
RD3H080SP - Power MOSFET
(ROHM)
RD3H080SP
Pch -45V -8A Power MOSFET
Datasheet
lOutline
VDSS
-45V
RDS(on)(Max.)
91mΩ
DPAK
ID
±8A
TO-252
PD
15W
lFeature.
RD3H200SN - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
RD3H200SN
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 45V(Min) ·Static Drain-Source On-R.
RD3H200SN - Power MOSFET
(ROHM)
.
RD3.0E - Zener diode
(Excel Semiconductor)
RD2.0E~RD39E
Zener diode
Features
1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard
Applications
Circuits for constant volta.
RD3.0E - SILICON ZENER DIODES
(EIC)
RD2.0E ~ RD39E
VZ : 2.0 - 39 Volts PD : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low le.
RD3.0E - Zener Diode
(NEC)
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE (DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in.
