* 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18
* Construction Silicon carbide epitaxial planer type 1.20 5.45 2.03 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode
* Absolute maximum ratings (Tj=
SCS120KE2 Datasheet (519.49 KB)
SCS120KE2
519.49 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
SCS120KE2 .
*Applications
General rectification
*Dimensions (Unit : mm)
Case
15.90
1.98 5.03
*Structure
Cas.
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