I8N25
ROUM
1.42MB
8a 250v n-channel enhancement mode power mosfet. These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switc
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I8NE60 - 7.5A 600V N-channel Enhancement Mode Power MOSFET
(ROUM)
8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtai.
I882 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
(Dc Components)
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DC COMPONENTS CO., LTD.
R
I882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Descriptio.