I8NE60
ROUM
1.34MB
7.5a 600v n-channel enhancement mode power mosfet. These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switc
TAGS
📁 Related Datasheet
I8N25 - 8A 250V N-channel Enhancement Mode Power MOSFET
(ROUM)
8N25/F8N25/I8N25/ E8N25/B8N25/D8N25
8A 250V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by .
I882 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
(Dc Components)
..
DC COMPONENTS CO., LTD.
R
I882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Descriptio.