Part number:
I8NE60
Manufacturer:
ROUM
File Size:
1.34 MB
Description:
7.5a 600v n-channel enhancement mode power mosfet
I8NE60
ROUM
1.34 MB
7.5a 600v n-channel enhancement mode power mosfet
* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Typical:5.5pF)
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS Test 3 Applications
* Used in various power switchi
📁 Related Datasheet
I8N25 - 8A 250V N-channel Enhancement Mode Power MOSFET
(ROUM)
8N25/F8N25/I8N25/ E8N25/B8N25/D8N25
8A 250V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by .
I882 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
(Dc Components)
..
DC COMPONENTS CO., LTD.
R
I882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Descriptio.
