1N4151 Datasheet - Rectron Semiconductor

1N4151 SIGNAL DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4151 1N4151 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 2 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dimensions in millimeters Di.

1N4151_RectronSemiconductor.pdf