MMBT3906 - Silicon PNP SMD triode
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"Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time.
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MMBT3906 Silicon PNP SMD triode 1˖base 2˖emitter 3˖collector encapsulation mode˖SOT-23 Classification of hFE˄1˅ Rank L H Range 100-200 200-300 Marking 2A Ouline example Maximum ratings(Ta=25ć unless otherwise noted) Parameter Symbol Value Collector-Base Breakdown Voltage VCBO -40 Collector-Emitter Breakdown Voltage VCEO -40 Emitter-Base Breakdown Voltage VEBO -6 Collector Current IC -200 Collector Power Dissipation PC 225 Junction Temperature TJ 150 Storage Temper
