RM4N650TI Features
* ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A Application ƽ Power factor correction˄PFC˅ ƽ Switc
Datasheet Details
RM4N650TI, RM4N650T2
Rectron
961.44 KB
N-channel super junction power mosfet.
This datasheet PDF includes multiple part numbers: RM4N650TI, RM4N650T2.
Please refer to the document for exact specifications by model.
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RM4N650TI Distributor
