RM4P20ES6

P-Channel Enhancement Mode Power MOSFET

Rectron

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Datasheet Details

Part number:

RM4P20ES6

Manufacturer:

Rectron

File Size:

623.73 KB

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Description:

P-channel enhancement mode power mosfet.
RM4P20ES6 P-ChannelEnhancement Mode Power MOSFET Description The RM4P20ES6 uses advanced trench te.
The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.

✔ RM4P20ES6 Features

VDS = -20V,ID = -4.1A RDS(ON) 2000V High power and current handing capability Lead free product is acquired Surface

✔ RM4P20ES6 Application

D G General Features VDS = -20V,ID = -4.1A RDS(ON) 200

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RM4P20ES6 P-Channel Enhancement Mode Power MOSFET Rectron

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