RM4P20ES6 - P-Channel Enhancement Mode Power MOSFET
RM4P20ES6 Features
* VDS = -20V,ID = -4.1A RDS(ON) 2000V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power management Halogen-free S Schematic diagram DDS G D D SOT23-6 top v
