* Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 :mm
* (Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) Parameter - Drain-Source Voltage - Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol V
F2N60
Red Diamond Optoelectronics
69.35 KB
N-channel power mosfet.
F2N60 N- MOS /N-CHANNEL POWER MOSFET : ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply : RoHS ◇F.
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F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
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F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2021 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
