* Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 :mm
* (Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) Parameter - Drain-Source Voltage - Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol V
F2N60
Red Diamond Optoelectronics
69.35 KB
N-channel power mosfet.
F2N60
N- MOS /N-CHANNEL POWER MOSFET
*:
◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply
*: RoHS
◇F.
📁 Related Datasheet
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F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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