* Low on-resistance R DS(on) = 10 mΩ typ. 4.5 V gate drive device High speed switching External View DPAK-2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain DataSheet 4 U .com www.DataSheet4U.com 2SK3274(L), 2SK3274(S) Absolute Maximum
2SK3274
Renesas ↗ Technology
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Slilicon n channel mos fet.
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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesa.
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