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2SK3000 - Silicon N Channel MOS FET

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Renesas Technology

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2SK3000 Silicon N Channel MOS FET by Renesas Technology - Datasheet Preview — Datasheet preview – 2SK3000

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Part number	2SK3000
Manufacturer	Renesas Technology
File Size	153.18 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK3000 Datasheet
Additional preview pages of the 2SK3000 datasheet.

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Low on-resistance DS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA).
4 V gate drive devices.
Small package (MPAK).
Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 1 1. Source 2. Gate 3. Drain 2 S Note: Marking is “ZY.
”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1.

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Published: Nov 9, 2008 |