Datasheet4U Logo Datasheet4U.com

2SK3001 - GaAs HEMT Low Noise Amplifier

2SK3001 Description

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st.Edition December 1997 .

2SK3001 Features

* Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
* High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
* Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensit

2SK3001 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

📥 Download Datasheet

Preview of 2SK3001 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SK3001
Manufacturer
Hitachi Semiconductor
File Size
145.04 KB
Datasheet
2SK3001_HitachiSemiconductor.pdf
Description
GaAs HEMT Low Noise Amplifier

📁 Related Datasheet

  • 2SK300 - N-Channel Silicon MOSFET (Sony Corporation)
  • 2SK3003 - MOSFET (Sanken)
  • 2SK3004 - MOSFET (ETC)
  • 2SK3009 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK301 - N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK3012 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK3013 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK3017 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

📌 All Tags

Hitachi Semiconductor 2SK3001-like datasheet