2SK3001 - GaAs HEMT Low Noise Amplifier

Product Overview

Hitachi Semiconductor

Part number	2SK3001
Manufacturer	Hitachi Semiconductor
File Size	145.04 KB
Description	GaAs HEMT Low Noise Amplifier
Datasheet	2SK3001 Datasheet
Additional preview pages of the 2SK3001 datasheet.

Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz).
High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz).
Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor.

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Published: Nov 9, 2008 |