2SK3001 GaAs HEMT Low Noise Amplifier

Hitachi Semiconductor

Description

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st.Edition December 1997 .

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Datasheet Specifications

Part number: 2SK3001
Manufacturer: Hitachi Semiconductor
File Size: 145.04 KB
Datasheet: 2SK3001_HitachiSemiconductor.pdf
Description: GaAs HEMT Low Noise Amplifier

Features

* Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
* High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
* Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensit

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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2SK3001 GaAs HEMT Low Noise Amplifier Hitachi Semiconductor

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