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2SK3017 Datasheet - Toshiba Semiconductor

2SK3017 Silicon N Channel MOS Type Field Effect Transistor

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK3017 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit .

2SK3017_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3017

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

719.67 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK3017 2SK3017 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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