2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK3017 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.05 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit
2SK3017_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK3017
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
719.67 KB
Description:
Silicon n channel mos type field effect transistor.