2SK3017 Datasheet - Toshiba Semiconductor

2SK3017, Silicon N Channel MOS Type Field Effect Transistor

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK3017 DC *DC Converter, Relay Drive and Motor Drive Ap.

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2SK3017_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3017

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

719.67 KB

Description:

Silicon N Channel MOS Type Field Effect Transistor

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.05 Ω (typ. ) z High forward transfer admittance : |Yfs| = 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

2SK3017 Distributors

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2SK3017 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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