Datasheet Details
Part number:
2SK3000
Manufacturer:
Hitachi Semiconductor
File Size:
47.50 KB
Description:
Silicon N Channel MOS FET
Features
* Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA)
* 4V gate drive devices.
* Small package (MPAK)
* Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000 Absolute Maximum Ratings (T
