BCR3AS-12A
Renesas ↗ Technology
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BCR3AS-12B - Triac
(Renesas Technology)
BCR3AS-12B
600V - 3A - Triac
Low Power Use
Features
• IT (RMS) : 3 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III: 15 mA
Data Sheet
R07DS1439EJ0500 (Previ.
BCR3AS-14B - Triac
(Renesas)
BCR3AS-14B
Triac
Low Power Use
Features
• IT (RMS) : 3 A • VDRM : 800 V (Tj = 125°C) • IFGT I, IRGT I, IRGT III : 30 mA
Outline
RENESAS Package code: .
BCR3AS - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.
BCR3AS - TRIAC
(Powerex Power Semiconductors)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AS
OUTLINE DRAWING
Dimensions in mm
6.5 4
1.
BCR3AM - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
OUTLINE DRAWING
10 MAX 4 φ3.2±0.1
TYPE NAM.
BCR3AM - Triac
(Powerex Power Semiconductors)
BCR3AM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
3 Amperes/400-600 Volts
OUTLINE DRAWING
P
H - DIA..
BCR3AM-14B - Triac
(Renesas)
BCR3AM-14B
700V - 3A - Triac
Low Power Use
Features
• IT (RMS): 3 A (non-continuous) • VDRM: 800 V (Tj = 125°C) • IFGTI, IRGTI, IRGT III: 30 mA • Tj: .
BCR3AM-8 - Thyristor
(INCHANGE)
isc Thyristors
INCHANGE Semiconductor
BCR3AM-8
DESCRIPTION ·A triac is a solid state silicon ·AC switch which may be gate triggered from an off-stat.
BCR30AM - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX 4
Dimension.
BCR30AM - TRIAC
(Powerex Power Semiconductors)
BCR30AM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
30 Ampere/400-600 Volts
OUTLINE DRAWING
C D лG E H.