GN4030V5AB Datasheet (Renesas Technology)

GN4030V5AB, IGBT

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Powe

GN4030V5AB Features

* Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Vin Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG Half Bridge Pch HAT3029R(30V) HAT3031