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HAT2169N Silicon N-Channel MOSFET

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Description

HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005 .

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Features

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* Capable
* High speed switching of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X X

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