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HAT2173N Silicon N-Channel MOSFET

HAT2173N Description

HAT2173N Silicon N Channel Power MOS FET Power Switching .

HAT2173N Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 2XXX 8(D) 7(D) 6(D) 5(D) 4 G 5678 DDDD SSS 1

HAT2173N Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOSFET Renesas Technology
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