HAT2175H Datasheet - Renesas Technology

HAT2175H, Silicon N-Channel MOSFET

HAT2175H Silicon N Channel Power MOS FET Power Switching

Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0006-0400 Rev.4.00 Sep 20, 2005 1, 2,

HAT2175H-RenesasTechnology.pdf