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HAT2199R Silicon N-Channel Power MOSFET

HAT2199R Description

HAT2199R Silicon N Channel Power MOS FET Power Switching .

HAT2199R Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 4 G 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2199R-like datasheet