Datasheet4U Logo Datasheet4U.com

HN29V1G91T-30 - 128M X 8-bit AG-AND Flash Memory

📥 Download Datasheet

Preview of HN29V1G91T-30 PDF
datasheet Preview Page 2 datasheet Preview Page 3

HN29V1G91T-30 Product details

Description

The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.

Features

📁 HN29V1G91T-30 Similar Datasheet

  • HN29V25611ABP - 256M AND Type Flash Memory (Hitachi)
  • HN29V25611AT-50H - 256M AND Type Flash Memory (Hitachi)
  • HN29V51211 - 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) (Hitachi Semiconductor)
  • HN29W12811 - 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) (Hitachi Semiconductor)
  • HN29W12814A - 128M and Type Flash Memory More than 16057 Sector X 2 (Hitachi)
  • HN29W12814ATT-50 - 128M and Type Flash Memory More than 16057 Sector X 2 (Hitachi)
  • HN29W25611 - 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) (Hitachi Semiconductor)
  • HN29W256H02TE-1 - Controller (Hitachi)
Other Datasheets by Renesas Technology
Published: |