HN29V1G91T-30 Datasheet (Renesas Technology) - 128M X 8-bit AG-AND Flash Memory

HN29V1G91T-30, 128M X 8-bit AG-AND Flash Memory

The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solu

HN29V1G91T-30 Features

* On-board single power supply: VCC = 2.7 V to 3.6 V

* Operation Temperature range: Ta = 0 to +70°C

* Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Register: (2048+64) bytes