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HN29W12811 - 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)

Datasheet Summary

Description

The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells.

It has fully automatic programming and erase capabilities with a single 3.3 V power supply.

The functions are controlled by simple external commands.

Features

  • On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V.
  • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes.
  • Multi-level memory cell  2 bit/per memory cell.
  • Automatic programming  Sector program time: 2.5 ms (typ)  System bus free  Address, data latch function  Internal automatic program verify function  Status data polling function.
  • Automatic erase  Single sector erase time: 1.0 m.

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Datasheet Details

Part number HN29W12811
Manufacturer Hitachi Semiconductor
File Size 315.62 KB
Description 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
Datasheet download datasheet HN29W12811 Datasheet
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Full PDF Text Transcription

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HN29W12811 Series 128M AND type Flash Memory More than 8,029-sector (135,657,984-bit) ADE-203-1183C (Z) Rev. 2.0 Feb. 7, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all sector address). Features • On-board single power supply (VCC): VCC = 3.3 V ± 0.
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