HN29W12811 - 128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)

Hitachi Semiconductor

Datasheet Details

Part number	HN29W12811
Manufacturer	Hitachi Semiconductor
File Size	315.62 KB
Description	128M AND type Flash Memory More than 8/029-sector (135/657/984-bit)
Datasheet	HN29W12811_HitachiSemiconductor.pdf

The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells.

On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V.
Organization  AND Flash Memory: (2048 + 64) bytes × (More than 8,029 sectors)  Data register: (2048 + 64) bytes.
Multi-level memory cell  2 bit/per memory cell.
Automatic programming  Sector program time: 2.5 ms (typ)  System bus free  Address, data latch function  Internal automatic program verify function  Status data polling function.
Automatic erase  Single sector erase time: 1.0 m.

📁 HN29W12811 Similar Datasheet

HN29W12814A - 128M and Type Flash Memory More than 16057 Sector X 2 (Hitachi)
HN29W12814ATT-50 - 128M and Type Flash Memory More than 16057 Sector X 2 (Hitachi)
HN29W256H02TE-1 - Controller (Hitachi)
HN29V1G91T-30 - 128M X 8-bit AG-AND Flash Memory (Renesas Technology)
HN29V25611A - 256M AND type Flash Memory More than 16057-sector (Renesas Technology)
HN29V25611ABP - 256M AND Type Flash Memory (Hitachi)
HN29V25611AT-50H - 256M AND Type Flash Memory (Hitachi)
HN29V2G74WT-30 - AG-AND Flash Memory (Renesas Technology)

Other Datasheets by Hitachi Semiconductor

HN29W25611 - 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
HN29WB800 - (HN29WB800 / HN29WT800) CMOS Flash Memory
HN29WT800 - (HN29WB800 / HN29WT800) CMOS Flash Memory
HN29V51211 - 512M AND type Flash Memory More than 32/113-sector (542/581/248-bit)
HN27C256A - 256K UV and OTP EPROM
HN27C256AG - 32768-word x 8-bit UV Erasable and Programmable ROM

Published: Mar 26, 2005 |