* On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
* Access time: 80/100/120 ns (max)
* Low power dissipation: ICC = 30 mA (max) (Read) ICC = 200 µA (max) (Standby) ICC = 40 mA (max) (Program) ICC = 40 mA (max) (Erase) ICC = 1 µA (typ) (Deep powerdown)
HN29WB800 Datasheet (204.47 KB)
HN29WB800
Hitachi Semiconductor
204.47 KB
(hn29wb800 / hn29wt800) cmos flash memory.
www.DataSheet4U.com
HN29WT800 Series HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z) Rev. 1.0 May. 9,.
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