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HVL147 Silicon Epitaxial Trench Pin Diode

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Description

www.DataSheet4U.com HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0200 Rev.2.00 Oct 20, 2004 .

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Features

* Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL147 L

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Silicon Epitaxial Trench Pin Diode Renesas Technology
Renesas Technology HVL147-like datasheet