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HVL147M Silicon Epitaxial Trench Pin Diode

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Description

HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 .

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Features

* Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M

HVL147M Distributors

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Silicon Epitaxial Trench Pin Diode Renesas Technology
Renesas Technology HVL147M-like datasheet