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HVL147M Datasheet - Renesas Technology

HVL147M - Silicon Epitaxial Trench Pin Diode

HVL147M Features

* Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M

HVL147M_RenesasTechnology.pdf

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Datasheet Details

Part number:

HVL147M

Manufacturer:

Renesas ↗ Technology

File Size:

181.05 KB

Description:

Silicon epitaxial trench pin diode.

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