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HVL147M - Silicon Epitaxial Trench Pin Diode

Renesas Technology

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Datasheet Details

Part number	HVL147M
Manufacturer	Renesas ↗ Technology
File Size	181.05 KB
Description	Silicon Epitaxial Trench Pin Diode
Datasheet	HVL147M_RenesasTechnology.pdf

HVL147M Product details

Features

Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark www. DataSheet4U. com 1.
N 2 1. Cathode 2. Anode Rev.3.00 Jan 20, 2006 page 1 of 4 HVL147M Abs.

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Published: Jul 22, 2007 |