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R1LV0416CSB-7LI, R1LV0416CSB-5SI Datasheet - Renesas Technology

R1LV0416CSB-7LI 4M SRAM

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; theref.

R1LV0416CSB-7LI Features

* Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V

* Fast access time: 55/70 ns (max)

* Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V)

* Completely static mem

R1LV0416CSB-5SI-RenesasTechnology.pdf

This datasheet PDF includes multiple part numbers: R1LV0416CSB-7LI, R1LV0416CSB-5SI. Please refer to the document for exact specifications by model.
R1LV0416CSB-7LI Datasheet Preview Page 2 R1LV0416CSB-7LI Datasheet Preview Page 3

Datasheet Details

Part number:

R1LV0416CSB-7LI, R1LV0416CSB-5SI

Manufacturer:

Renesas ↗ Technology

File Size:

96.01 KB

Description:

4m sram.

Note:

This datasheet PDF includes multiple part numbers: R1LV0416CSB-7LI, R1LV0416CSB-5SI.
Please refer to the document for exact specifications by model.

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R1LV0416CSB-7LI R1LV0416CSB-5SI SRAM Renesas Technology

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