RJK5030DPD Datasheet - Renesas Technology

Silicon N Channel MOS FET High Speed Power Switching

RJK5030DPD Features

* Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)

* High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (

RJK5030DPD General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK5030DPD Datasheet (94.44 KB)