RJK5030DPD Datasheet - Renesas Technology

RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching

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RJK5030DPD Features

* Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)

* High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (

RJK5030DPD_RenesasTechnology.pdf