RJK5030DPD - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK5030DPD Datasheet Preview — Preview of RJK5030DPD PDF

Datasheet Details

Part number	RJK5030DPD
Manufacturer	Renesas ↗ Technology
File Size	94.44 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK5030DPD_RenesasTechnology.pdf

RJK5030DPD Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C).
High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline.

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Published: Jul 23, 2010 |