RQA0005MXAQS Datasheet, Mos Fet, Renesas Technology

Silicon n-channel mos fet

RQA0005MXAQS

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Silicon n-channel mos fet.
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High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
Compact package capable of surface mounting Outline RENESA

such as the development of weapons of mass destruction or for the purpose of any other military use. When ex

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RQA0005MXAQS Silicon N-Channel MOS FET Renesas Technology