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RQA0005QXDQS Datasheet - Renesas Technology

Silicon N-Channel MOS FET

RQA0005QXDQS Features

* High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)

* Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK     3 3 2 1 1 1. Gate 2. Source 3. Drain 4. Source 4 2

RQA0005QXDQS Datasheet (235.97 KB)

Preview of RQA0005QXDQS PDF

Datasheet Details

Part number:

RQA0005QXDQS

Manufacturer:

Renesas ↗ Technology

File Size:

235.97 KB

Description:

Silicon n-channel mos fet.

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RQA0005QXDQS Silicon N-Channel MOS FET Renesas Technology

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