RQA0005QXDQS - Silicon N-Channel MOS FET
RQA0005QXDQS Features
* High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
* Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK 3 3 2 1 1 1. Gate 2. Source 3. Drain 4. Source 4 2
